W29EE512 |
RFQ for W29EE512 Required Field |
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| Product | Manufacturers | Pack | D/C |
| W29EE512 | - | PLCC/DIP | - |
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
Features |
| · Single 5-volt program and erase operations· Fast page-write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte-program cycle time: 39 mS - Optional software-protected data write· Fast chip-erase operation: 50 mS· Read access time: 70/90/120 nS· Typical page program/erase cycles: 1K/10K· Ten-year data retention· Software and hardware data protection· Low power consumption - Active current: 50 mA (max.) - Standby current: 100 mA (max.)· Automatic program timing with internal VPP generation· End of program detection - Toggle bit -Data polling· Latched address and data· TTL compatible I/O· JEDEC standard byte-wide pinouts· Available packages: 32-pin PLCC, TSOP and VSOP |
| PARAMETER | RATING | UNIT |
| Power Supply Voltage to Vss Potential | -0.5 to +7.0 | V |
| Operating Temperature | 0 to +70 | °C |
| Storage Temperature | -65 to +150 | °C |
| D.C. Voltage on Any Pin to Ground Potential Except A9 | -0.5 to VDD +1.0 | V |
| Transient Voltage (<20 nS ) on Any Pin to Ground Potential | -1.0 to VDD +1.0 | V |
| Voltage on A9 and #OE Pin to Ground Potential | -0.5 to 12.5 | V |
